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high-performance ir emitter and ir pin photodiode in subminiature smt package technical data features ? subminiature flat top and dome package size C 2x2 mm ? ir emitter 875 nm ts algaas intensity C 17 mw/sr speed C 40 ns ? wide range of drive currents 500 m a to 500 ma ? ir detector pin photodiode high sensitivity speed C 7.5 ns ? flexible lead configurations surface mount or through hole applications ? short distance ir links ? irda compatible ? small handheld devices pagers industrial handhelds ? diffuse lans ? wireless audio description flat top package the hsdl-4400 series of flat top ir emitters use an untinted, nondiffused, truncated lens to provide a wide radiation pattern that is useful for short distance communication where alignment of the emitter and detector is not critical. the hsdl-5400 series of flat top ir detectors uses the same truncated lens design as the hsdl-4400 series of ir emitters with the added feature of a black tint that acts as an optical filter to reduce the effects of ambient light, such as sun, incandescent and fluorescent light from interfering with the ir signal. dome package the hsdl-4420 series of dome ir emitters uses an untinted, nondiffused lens to provide a 24 degree viewing angle with high on-axis intensity. the hsdl-5420 series of ir detectors uses the same lens design as the hsdl- 4420 ir emitter and optical filter used in the hsdl-5400 ir detector. lead configuration all of these devices are made by encapsulating led and pin photodiode chips on axial lead frames to form molded epoxy subminiature packages. a variety of lead configurations is available and includes: surface mount gull wing, yoke lead, or z-bend and through hole lead bends at 2.54 mm (0.100 inch) center spacing. technology the subminiature solid state emitters utilize a highly optimized led material, transparent sub- strate aluminum gallium arsenide, ts algaas. this material has a very high radiant efficiency, capable of producing high light output over a wide range of drive currents and temperature. hsdl-44xx ir emitter series hsdl-54xx ir detector series
2 package configuration options package outline option code package configuration description drawing 011 gull wing lead, tape and reel [2] e, j, m 021 yoke lead, tape and reel [2] f, k, m 031 z-bend, tape and reel [2] g, l, m 1l1 2.54 mm (0.100 in) long leads; thru hole h center lead spacing 10.4 mm (0.410 in) lead 1s1 short leads; i 3.7 mm (0.145 in) no option straight leads [3] prototyping a, b, c, d notes: 1. ir emitters have untinted, nondiffused lenses and ir detectors have black tinted, nondiffused lenses. 2. emitters and detectors are supplied in 12 mm embossed tape on 178 mm (7 inch) diameter reels, with 1500 units per reel. minimum order quantity and order increment are in quantity of reels only. 3. emitters and detectors are supplied in bulk form in bags of 50 units. 4. the hsdl-44xx and hsdl-54xx families are not designed to be used in medical devices with life support functions or in safety equipment (or similar applications where components failures would result in loss of life or physical harm), eg. in automotive, medical or airline industries. ir detectors part number device description [1] device outline drawing hsdl-5400 pin photodiode, flat top, 110 deg c hsdl-5420 pin photodiode, dome, 28 deg d device selection guide ir emitters part number device description [1] device outline drawing hsdl-4400 led, flat top, 110 deg a hsdl-4420 led, dome, 24 deg b surface mount lead
3 notes: 1. all dimensions are in millimetres (inches). 2. protruding support tab is connected to anode lead. 3. lead polarity for these ts algaas subminiature lamps is opposite to the lead polarity of subminiature lamps using other led technologies. 4. cathode stripe marking is dark blue. package dimensions (a) flat top emitters (b) dome emitters 1.14 1.40 (0.045) (0.055) 0.58 0.43 (0.023) (0.017) 1.91 2.16 (0.075) (0.085) 0.18 0.23 (0.007) (0.009) 0.76 (0.030) max. 1.91 2.41 (0.075) (0.095) 2.08 2.34 (0.082) (0.092) cathode stripe note 4 0.46 0.56 (0.018) (0.022) 1.40 1.65 (0.055) (0.065) 0.25 (0.010) max.* 0.20 (0.008) max. 0.50 (0.020) ref. note 3 anode 1.65 1.91 (0.065) (0.075) dia. cathode 11.68 10.67 (0.460) (0.420) both sides note 2 0.25 (0.010) max.* 0.20 (0.008) max. 0.50 (0.020) ref. note 3 anode 1.65 1.91 (0.065) (0.075) dia. cathode 0.46 0.56 (0.018) (0.022) note 2 11.68 10.67 (0.460) (0.420) both sides 0.94 1.24 (0.037) (0.049) 2.08 2.34 (0.082) (0.092) cathode stripe note 4 2.92 (0.115) max. 0.76 0.89 (0.030) (0.035) r. 0.63 0.38 (0.025) (0.015) 0.18 0.23 (0.007) (0.009) 1.91 2.16 (0.075) (0.085) 2.03 (0.080) 1.78 (0.070) 0.79 (0.031) 0.53 (0.021)
4 (d) dome detectors (c) flat top detectors notes: 1. all dimensions are in millimetres (inches). 2. protruding support tab is connected to cathode lead. 3. cathode stripe marking is dark blue. 1.14 1.40 (0.045) (0.055) 0.58 0.43 (0.023) (0.017) 1.91 2.16 (0.075) (0.085) 0.18 0.23 (0.007) (0.009) 0.76 (0.030) max. 1.91 2.41 (0.075) (0.095) 2.08 2.34 (0.082) (0.092) cathode stripe note 3 0.46 0.56 (0.018) (0.022) 1.40 1.65 (0.055) (0.065) 0.25 (0.010) max.* 0.20 (0.008) max. 0.50 (0.020) ref. cathode 1.65 1.91 (0.065) (0.075) dia. anode 11.68 10.67 (0.460) (0.420) both sides note 2 0.25 (0.010) max.* 0.20 (0.008) max. 0.50 (0.020) ref. cathode 1.65 1.91 (0.065) (0.075) dia. anode 0.46 0.56 (0.018) (0.022) note 2 11.68 10.67 (0.460) (0.420) both sides 0.94 1.24 (0.037) (0.049) 2.08 2.34 (0.082) (0.092) cathode stripe note 3 2.92 (0.115) max. 0.76 0.89 (0.030) (0.035) r. 0.63 0.38 (0.025) (0.015) 0.18 0.23 (0.007) (0.009) 1.91 2.16 (0.075) (0.085) 2.03 (0.080) 1.78 (0.070) 0.79 (0.031) 0.53 (0.021)
5 0.76 (0.030) max. (f) yoke lead, options 021 0.76 (0.030) max. package dimensions the following notes affect the package outline drawings e through i. 1. the pinout represents the hsdl-54xx ir detectors where the protruding support tab is closest to the anode lead. while the pinout is reversed for the hsdl-44xx ir emitters where the protruding support tab is closest to the cathode lead. 2. the protruding support tab of the hsdl-54xx is connected to the cathode lead. while the protruding support tab of the hsdl-44xx is connected to the anode lead. all dimensions are in millimetres (inches) (e) gull wing lead, option 011
6 (g) z-bend lead, options 031 0.76 (0.030) max. (h) thru hole lead option 1l1 (i) thru hole lead option 1s1
7 package dimensions: surface mount tape and reel options (j) 12 mm tape and reel, gull wing lead, option 011 gull wing lead subminiature package notes: 1. empty component pockets sealed with top cover tape. 2. 7 inch reel C 1500 pieces per reel. 3. minimum leader length at either end of the tape is 500 mm. 4. the maximum number of consecutive missing devices is two. 5. in accordance with ansi/eia rs-481 specifications, the cathode is oriented towards the tape sprockets hole.
8 (k) 12 mm tape and reel, yoke lead, option 021 yoke lead subminiature package
9 (l) 12 mm tape and reel, z-bend lead, option 031 z-bend lead subminiature package
10 (m) 12 mm tape and reel
11 hsdl-44xx absolute maximum ratings parameter symbol min. max. unit ref. peak forward current ( duty factor = 20%, i fpk 500 ma fig. 7, 8 pulse width = 100 m s) dc forward current i fdc 100 ma fig. 6 power dissipation p diss 100 mw reverse voltage (i r = 100 m a) v r 5v transient forward current (10 m s pulse) i ftr 1.0 a [1] operating temperature t o -40 85 c storage temperature t s -55 100 c junction temperature t j 110 c lead solder temperature 260/5 s c [1.6 mm (0.063 in.) from body] reflow soldering temperatures convection ir 235/90 s c fig. 20 vapor phase 215/180 s c note: 1. the transient peak current in the maximum nonrecurring peak current the device can withstand without damaging the led die and the wire bonds. hsdl-44xx electrical characteristics at t a = 25 c parameter symbol min. typ. max. unit condition ref. forward voltage v f 1.30 1.50 1.70 v i fdc = 50 ma fig. 2 2.15 i fpk = 250 ma forward voltage d v f / d t -2.1 mv/ ci fdc = 50 ma fig. 3 temperature coefficient -2.1 i fdc = 100 ma series resistance r s 2 w i fdc = 100 ma diode capacitance c o 50 pf 0 v, 1 mhz reverse voltage v r 520 vi r = 100 m a thermal resistance, r q jp 170 c/w junction to pin
12 hsdl-44xx optical characteristics at t a = 25 c parameter symbol min. typ. max. unit condition ref. radiant on-axis intensity hsdl-4400 i e 1 3 8 mw/sr i fdc = 50 ma fig. 4, 5 6i fdc = 100 ma 15 i fpk = 250 ma hsdl-4420 i e 9 17 30 mw/sr i fdc = 50 ma fig. 4, 5 32 i fdc = 100 ma 85 i fpk = 250 ma radiant on-axis intensity d i e / d t -0.35 %/ ci fdc = 50 ma temperature coefficient -0.35 i fdc = 100 ma viewing angle hsdl-4400 2 q 1/2 110 deg i fdc = 50 ma fig. 9 hsdl-4420 2 q 1/2 24 deg i fdc = 50 ma fig. 10 peak wavelength l pk 850 875 900 nm i fdc = 50 ma fig. 1 peak wavelength dl / d t 0.25 nm/ ci fdc = 50 ma temperature coefficient spectral width at fwhm dl 37 nm i fdc = 50 ma fig. 1 optical rise and fall t r /t f 40 ns i fpk = 50 ma times, 10%-90% bandwidth f c 9 mhz i fdc = 50 ma fig. 11 10 ma
13 hsdl-54xx absolute maximum ratings parameter symbol min. max. unit power dissipation p diss 150 mw reverse voltage (i r = 100 m a) v r 40 v operating temperature t o -40 85 c storage temperature t s -55 100 c junction temperature t j 110 c lead solder temperature [1.6 mm (0.063 in.) from body] 260/5 s c reflow soldering temperatures convection ir 235/90 s c vapor phase 215/180 s c hsdl-54xx electrical characteristics at t a = 25 c parameter symbol min. typ. max. unit condition ref. forward voltage v f 0.8 v i fdc = 1 ma breakdown voltage v br 40 v i r = 100 m a, e e = 0 mw/cm 2 reverse dark current i d 15nav r = 5 v, fig. 12 e e = 0 mw/cm 2 series resistance r s 2000 w v r = 5 v, e e = 0 mw/cm 2 diode capacitance c o 5pfv r = 0 v, fig. 16 e e = 0 mw/cm 2 f = 1 mhz open circuit voltage v oc 375 mv e e = 1 mw/cm 2 l pk = 875 nm temperature coefficient of v oc d v oc / d t -2.2 mv/k e e = 1 mw/cm 2 l pk = 875 nm short circuit current i sc e e = 1 mw/cm 2 hsdl-5400 1.6 m a hsdl-5420 4.3 m a temperature coefficient of i sc d i sc / d t 0.16 %/k e e = 1 mw/cm 2 l pk = 875 nm thermal resistance, r q jp 170 c/w junction to pin l pk = 875 nm
14 fig. 14, 15 e e = 1 mw/cm 2 l pk = 875 nm v r = 5 v hsdl-54xx optical characteristics at t a = 25 c parameter symbol min. typ. max. unit condition ref. photocurrent hsdl-5400 i ph 0.8 1.6 m a hsdl-5420 3.0 6.0 temperature coefficient d i ph / d t 0.1 %/k e e = 1 mw/cm 2 fig. 13 of i ph l pk = 875 nm v r = 5 v radiant sensitive area a 0.15 mm 2 absolute spectral sensitivity s 0.5 a/w e e = 1 mw/cm 2 l pk = 875 nm v r = 5 v viewing angle hsdl-5400 2 q 1/2 110 deg fig. 18 hsdl-5420 28 fig. 19 wavelength of peak l pk 875 nm e e = 1 mw/cm 2 fig. 17 sensitivity v r = 5 v spectral bandwidth dl 770- nm e e = 1 mw/cm 2 fig. 17 1000 v r = 5 v quantum efficiency h 70 % e e = 1 mw/cm 2 l pk = 875 nm, v r = 5 v noise equivalent power nep 6.2 x w/hz 1/2 v r = 5 v 10 -15 l pk = 875 nm detectivity d 6.3 x cm* v r = 5 v 10 12 hz 1/2 /w l pk = 875 nm optical rise and fall times, t r /t f 7.5 ns v r = 5 v 10%-90% r l = 1 k w l pk = 875 nm bandwidth f c 50 mhz v r = 5 v r l = 1 k w l pk = 875 nm
15 relative radiant intensity 850 950 0 l ?wavelength ?nm 900 800 0.5 1.0 1.5 t a = 25 ? i fdc = 50 ma i fpk ?peak forward current ?ma 1.0 1,000 1 v f ?forward voltage ?v 1.5 2.0 2.5 3.0 0.5 0 10 100 t a = 25 ? figure 3. forward voltage vs ambient temperature. figure 5. normalized radiant intensity vs. peak forward current (0 to 10 ma). normalized radiant intensity 0 500 5.00 0 i fpk ?peak forward current ?ma 4.00 0.50 400 pulse widths < 100 ? 100 2.50 200 300 1.00 1.50 2.00 3.00 3.50 4.50 t a = 25? normalized radiant intensity 0.1 10 1.00 0.01 i fpk ?forward current ?ma 0.10 1 t a = 25? i fdc ?maximum dc forward current ?ma -40 100 120 0 t a ?ambient temperature ?? 60 -20 100 80 40 20 0 20406080 r q ja = 220 ?/w r q ja = 270 ?/w r q ja = 370 ?/w i fpk ?peak forward current ?ma 0.01 10 0 t pw ?pulse width ?ms 300 500 400 200 100 0.1 1 duty factor 7 % 10 % 20 % 50 % i fpk ?peak forward current ?ma -40 100 600 0 t a ?ambient temperature ?? 300 -20 500 400 200 100 0 20406080 pulse widths < 100 ? duty factor 10 % 20 % 50 % 20 % 50 % 10 % figure 8. maximum peak forward current vs. ambient temperature. derated based on t jmax = 110 c. v f ?forward voltage ?v 2.0 1.0 t a ?ambient temperature ?? -20 1.2 0 20406080 i fdc = 1 ma 1.8 1.6 1.4 i fdc = 50 ma i fdc = 100 ma figure 1. relative radiant intensity vs. wavelength. figure 2. peak forward current vs. forward voltage. figure 4. normalized radiant intensity vs. peak forward current. figure 6. maximum dc forward current vs. ambient temperature. derated based on t jmax = 110 c. figure 7. maximum peak forward current vs. duty factor.
16 figure 12. reverse dark current vs. ambient temperature. figure 13. relative reverse light current vs. ambient temperature. figure 10. relative radiant intensity vs. angular displacement hsdl-4420. relative radiant intensity 1.0 0 q ?angle from optical centerline ?degrees (cone half angle) 0.8 0.6 0.5 0.7 0.2 -100 0.1 0.3 0.4 -80 -60 -40 -20 0 20 40 60 80 100 0.9 i f = 50 ma t a = 25? figure 9. relative radiant intensity vs. angular displacement hsdl-4400. relative radiant intensity 1.0 0 q ?angle from optical centerline ?degrees (cone half angle) 0.8 0.6 0.5 0.7 0.2 -50 0.1 0.3 0.4 -40 -30 -20 -10 0 10 20 30 40 50 0.9 i f = 50 ma t a = 25? figure 11. relative radiant intensity vs. frequency. relative radiant intensity 1e+5 1e+8 2 -10 f ?frequency ?hz -4 1e+6 1e+7 -7 -1 1 0 -2 -3 -5 -6 -8 -9 t a = 25? 9 mhz i d ?reverse dark current ?na 0 100 10.000 0.001 t a ?ambient temperature ?? 0.100 80 v r = 5 v 20 40 60 0.010 1.000 normalized photocurrent -40 100 1.40 0.60 t a ?ambient temperature ?? 1.00 80 -20 20 40 0.80 1.20 1.30 1.10 0.90 0.70 060 v r = 5 v
17 normalized photocurrent 0.01 10 10 0.01 e e ?irradiance ?mw/cm 2 0.1 0.1 1 1 v r = 5 v t a = 25? normalized photocurrent 040 1.40 0.60 v r ?reverse voltage ?v 1.00 35 52025 0.80 1.20 1.30 1.10 0.90 0.70 10 30 15 t a = 25? c o ?diode capacitance ?pf 0.1 100 5 0 v r ?reverse voltage ?v 4 3 2 1 10 1 e e = 0 mw/cm 2 f = 1 mhz t a = 25? figure 14. reverse light current vs. irradiance figure 15. reverse light current vs. reverse voltage. figure 16. diode capacitance vs. reverse voltage. at the time of this publication, light emitting diodes (leds) that are contained in this product are regulated for eye safety in europe by the commission for european electrotechnical standardization (cenelec) en60825-1. please refer to application brief i-008 for more information. figure 17. relative spectral sensitivity vs. wavelength. normalized photocurrent 700 1100 1.2 0 l ?wavelength ?nm 0.6 1050 750 900 950 0.4 1.0 0.8 0.2 800 1000 850 v r = 5 v t a = 25?
figure 19. relative radiant intensity vs. angular displacement. hsdl-5420. normalized photocurrent 1.0 0 q ?angle from optical centerline ?degrees (cone half angle) 0.8 0.6 0.5 0.7 0.2 -50 0.1 0.3 0.4 -40 -30 -20 -10 0 10 20 30 40 50 0.9 normalized photocurrent 1.0 0 q ?angle from optical centerline ?degrees (cone half angle) 0.8 0.6 0.5 0.7 0.2 -100 0.1 0.3 0.4 -80 -60 -40 -20 0 20 40 60 80 100 0.9 v r = 5 v t a = 25? figure 18. relative radiant intensity vs. angular displacement. hsdl-5400. figure 20. evaluation soldering profiles (polyled). temperature (?) 250 0 time (s) 200 150 50 0 100 50 100 150 200 250 300 350 400 evaluation normal coq ramp up rate (25 c - 125 c) = 2 to 3 c/s peak temperature = 230 5 c for 10 s temperature maintained above 183 c = 60 s to 150 s ramp down rate (170 c - 50 c) = 3 to 4 c/s 18
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (408) 654-8675 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 271 2451 india, australia, new zealand: (+65) 271 2394 japan: (+81 3) 3335-8152(domestic/interna- tional), or 0120-61-1280(domestic only) korea: (+65) 271 2194 malaysia, singapore: (+65) 271 2054 taiwan: (+65) 271 2654 data subject to change. copyright ? 2002 agilent technologies, inc. obsoletes 5988-2425en january 17, 2002 5988-5284en

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